VF30100SG-E3/4W, Diode Schottky 100V 30A

PartNumber: VF30100SG-E3/4W
Ном. номер: 8047453747
Производитель: Vishay
VF30100SG-E3/4W, Diode Schottky 100V 30A
Доступно на заказ 15 шт. Отгрузка со склада в Москве 6 недель.
180 × = 900
Количество товаров должно быть кратно 5 шт.

Описание

TMBS® Trench MOS Barrier Schottky Rectifiers, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS®) Rectifier Series by Vishay contain a patented trench structure. TMBS® rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS® structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features

Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage

Diodes and Rectifiers, Vishay Semiconductor

Полупроводники / Дискретные компоненты / Выпрямительные диоды и диоды Шоттки /
Vishay VF30100SG-E3/4W, Schottky Diode, 100V 30A, 3-pin TO-220F

Технические параметры

размеры
10.26 x 4.83 x 15.24mm
Diode Type
Schottky
высота
15.24mm
длина
10.26mm
Maximum Continuous Forward Current
30A
максимальная рабочая температура
+150 °C
Minimum Operating Temperature
-40 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-220F
Peak Forward Voltage
1V
Peak Reverse Current
35mA
Peak Reverse Repetitive Voltage
100V
Pin Count
3
ширина
4.83mm
Diode Configuration
Single

Дополнительная информация

V30100SG, VF30100SG, VB30100SG &amp ...