VS-40MT120UHAPBF, IGBT Ultrafast Half-Bridg

PartNumber: VS-40MT120UHAPBF
Ном. номер: 8073127338
Производитель: Vishay
VS-40MT120UHAPBF, IGBT Ultrafast Half-Bridg
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Описание

IGBT Modules, Vishay
Vishay's high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Полупроводники / Дискретные компоненты / IGBT модули /
Vishay, VS-40MT120UHAPBF, IGBT Module, Dual, 80 A max, 1200 V, 13-pin MTP

Технические параметры

Channel Type
N
конфигурация
Dual, Emitter-Collector
Dimensions
63.5 x 33 x 16mm
Maximum Collector Emitter Voltage
1200 V
Maximum Continuous Collector Current
80 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
463 W
Minimum Operating Temperature
-40 °C
Package Type
MTP
Pin Count
13
Switching Speed
60kHz
Width
33mm
высота
16mm
длина
63.5mm
тип монтажа
Screw Mount

Дополнительная информация

40MT120UHAPbF/40MT120UHTAPbF "Half-Bridge ...