STD2N105K5

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4 шт. со склада г.Москва, срок 10-11 дней

660 руб.

от 2 шт. — 550 руб.

Добавить в корзину 1 шт. на сумму 660 руб.

Альтернативные предложения2

Номенклатурный номер: 8001940781

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 1050В, 0,95А, 60Вт, DPAK Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	38.5 ns
Id - Continuous Drain Current	1.5 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	60 W
Product Category	MOSFET
Qg - Gate Charge	10 nC
Rds On - Drain-Source Resistance	6 Ohms
Rise Time	8.5 ns
RoHS	Details
Series	MDmesh K5
Technology	Si
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	14.5 ns
Vds - Drain-Source Breakdown Voltage	1050 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	38.5 ns
Id - Continuous Drain Current:	1.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	60 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	10 nC
Rds On - Drain-Source Resistance:	6 Ohms
Rise Time:	8.5 ns
Series:	STD2N105K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	14.5 ns
Vds - Drain-Source Breakdown Voltage:	1.05 kV
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.35