IKW30N65EL5XKSA1
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1 650 руб.
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1 520 руб.
от 5 шт. —
1 410 руб.
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 85A, TO-247, DC Collector Current:85A, Collector Emitter Saturation Voltage Vce(on):1.05V, Power Dissipation Pd:227W, Collector Emitter Voltage V(br)ceo:650V, Transistor Case Style:TO-247, No. of Pins:3Pins, , RoHS Compliant: Yes
Технические параметры
| Current - Collector (Ic) (Max) | 85A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 168nC |
| IGBT Type | - |
| Input Type | Standard |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 227W |
| Reverse Recovery Time (trr) | 100ns |
| Series | TrenchStopв(ў 5 |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 470ВµJ(on), 1.35mJ(off) |
| Td (on/off) @ 25В°C | 33ns/308ns |
| Test Condition | 400V, 30A, 10 Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 30A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.05 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 85 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW30N65EL5 SP001178080 |
| Pd - Power Dissipation: | 227 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop IGBT5 L5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 85 A |
| Maximum Gate Emitter Voltage | 30V |
| Maximum Power Dissipation | 227 W |
| Number of Transistors | 1 |
| Package Type | PG-TO247 |
| Pin Count | 3 |
| Вес, г | 4.43 |
Техническая документация
Datasheet IKW30N65EL5XKSA1
pdf, 1836 КБ
Datasheet IKW30N65EL5XKSA1
pdf, 1926 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
