SQJ463EP-T1_GE3
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Описание
Электроэлемент
MOSFET, P-CH, -40V, -30A, POWERPAK SO, Transistor Polarity:P Channel, Continuous Drain Current Id:-30A, Drain Source Voltage Vds:-40V, On Resistance Rds(on):0.008ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2V, MSL:- , RoHS Compliant: Yes
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 30A(Tc) |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5875pF @ 20V |
Manufacturer | Vishay Siliconix |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | PowerPAKВ® SO-8 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 83W(Tc) |
Rds On (Max) @ Id, Vgs | 10mOhm @ 18A, 10V |
Series | Automotive, AEC-Q101, TrenchFETВ® |
Supplier Device Package | PowerPAKВ® SO-8 |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
Brand: | Vishay/Siliconix |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 51 ns |
Forward Transconductance - Min: | 45 S |
Id - Continuous Drain Current: | 30 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | PowerPAK-SO-8L-4 |
Pd - Power Dissipation: | 83 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 150 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 8 mOhms |
Rise Time: | 17 ns |
Series: | SQ |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 121 ns |
Typical Turn-On Delay Time: | 21 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Документация
pdf, 166 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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