SQJA04EP-T1_GE3

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470 руб.

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Номенклатурный номер: 8001960047

Электроэлемент

MOSFET 60V Vds PowerPAK AEC-Q101 Qualified

Current - Continuous Drain (Id) @ 25В°C	75A(Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® SO-8
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	68W(Tc)
Rds On (Max) @ Id, Vgs	6.2mOhm @ 10A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	PowerPAKВ® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3.5V @ 250ВµA
Brand:	Vishay/Siliconix
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	5 ns
Id - Continuous Drain Current:	75 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8L-4
Pd - Power Dissipation:	68 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	35 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	6.2 mOhms
Rise Time:	5 ns
Series:	SQJA
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.51