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SQJA68EP-T1_GE3

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см. техническую документацию

230 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 180 руб.

от 10 шт. — 147 руб.

от 28 шт. — 132.30 руб.

Добавить в корзину 2 шт. на сумму 460 руб.

Номенклатурный номер: 8001960106

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Электроэлемент

MOSFET, AEC-Q101, 100V, POWERPACK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0765ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	14A(Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® SO-8
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	45W(Tc)
Rds On (Max) @ Id, Vgs	92mOhm @ 4A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	PowerPAKВ® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	14
Maximum Drain Source Resistance (mOhm)	92@10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	45000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
PCB changed	4
Pin Count	5
PPAP	Yes
Process Technology	TrenchFET
Product Category	Power MOSFET
Supplier Package	PowerPAK SO
Supplier Temperature Grade	Automotive
Tab	Tab
Typical Fall Time (ns)	5
Typical Gate Charge @ 10V (nC)	4.7
Typical Gate Charge @ Vgs (nC)	4.7@10V
Typical Input Capacitance @ Vds (pF)	212@25V
Typical Rise Time (ns)	5
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	9
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	5 ns
Id - Continuous Drain Current:	14 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8-4
Pd - Power Dissipation:	45 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	4.7 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	76.5 mOhms
Rise Time:	5 ns
Series:	SQJA
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V