SQJ454EP-T1_GE3

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430 руб.

от 2 шт. — 330 руб.

от 5 шт. — 268 руб.

Добавить в корзину 1 шт. на сумму 430 руб.

Номенклатурный номер: 8001960377

Электроэлемент

Current - Continuous Drain (Id) @ 25В°C	13A(Tc)
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® SO-8
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	68W(Tc)
Rds On (Max) @ Id, Vgs	145 mOhm @ 7.5A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	PowerPAKВ® SO-8
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	8 ns
Id - Continuous Drain Current:	13 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8-4
Pd - Power Dissipation:	68 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	56 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	145 mOhms
Rise Time:	5 ns
Series:	SQ
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	33 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.01