SQJQ960EL-T1_GE3

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730 руб.

от 2 шт. — 610 руб.

от 5 шт. — 539 руб.

от 6 шт. — 519.12 руб.

Добавить в корзину 1 шт. на сумму 730 руб.

Номенклатурный номер: 8001962274

Электроэлемент

Транзистор N-MOSFET x2, полевой, 60В, 36А, 24Вт, PowerPAK® 8x8L

Current - Continuous Drain (Id) @ 25В°C	63A(Tc)
Drain to Source Voltage (Vdss)	60V
FET Feature	Standard
FET Type	2 N-Channel(Dual)
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® 8x8 Dual
Packaging	Cut Tape(CT)
Part Status	Active
Power - Max	71W
Rds On (Max) @ Id, Vgs	9 mOhm @ 10A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	PowerPAKВ® 8x8 Dual
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	3 ns
Id - Continuous Drain Current:	63 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	PowerPAK-8x8-4
Pd - Power Dissipation:	71 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	9 mOhms
Rise Time:	3 ns
Series:	SQ
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V