STB14NK50ZT4
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см. техническую документацию
см. техническую документацию
23 шт. со склада г.Москва, срок 6-7 дней
470 руб.
от 2 шт. —
370 руб.
от 5 шт. —
304 руб.
от 10 шт. —
278.46 руб.
Добавить в корзину 1 шт.
на сумму 470 руб.
Альтернативные предложения3
Описание
Электроэлемент
N-Channel 500 V 11 A 380 mOhm 150 W Surface Mount Power Mosfet - D2PAK
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 1000 |
Fall Time | 12 ns |
Forward Transconductance - Min | 12 S |
Height | 4.6 mm |
Id - Continuous Drain Current | 14 A |
Length | 10.4 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-263-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 150 W |
Product Category | MOSFET |
Qg - Gate Charge | 69 nC |
Rds On - Drain-Source Resistance | 380 mOhms |
Rise Time | 16 ns |
RoHS | Details |
Series | STB14NK50Z |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 54 ns |
Typical Turn-On Delay Time | 24 ns |
Unit Weight | 0.139332 oz |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 9.35 mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 12 ns |
Forward Transconductance - Min: | 12 S |
Id - Continuous Drain Current: | 14 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 150 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 92 nC |
Rds On - Drain-Source Resistance: | 380 mOhms |
Rise Time: | 16 ns |
Series: | STB14NK50Z |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 54 ns |
Typical Turn-On Delay Time: | 24 ns |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Channel Type | N |
Maximum Continuous Drain Current | 14 A |
Maximum Drain Source Resistance | 380 mΩ |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Power Dissipation | 150 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 69 nC @ 10 V |
Вес, г | 1.2 |
Техническая документация
Datasheet
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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