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ZVP4424A

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см. техническую документацию

610 руб.

от 2 шт. — 550 руб.

от 10 шт. — 490 руб.

Добавить в корзину 1 шт. на сумму 610 руб.

Номенклатурный номер: 8001989048

Бренд: DIODES INC.

Описание

Электроэлемент

Описание Транзистор P-MOSFET, полевой, -240В, -0,2А, 750мВт, TO92 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Channel Mode	Enhancement
Maximum Continuous Drain Current	0.2A
Maximum Drain Source Resistance	9?
Maximum Drain Source Voltage	240V
Maximum Gate Source Voltage	±40V
Minimum Operating Temperature	-55°C
Number of Elements per Chip	1
Pin Count	3
Product Height	4.01mm
Product Length	4.77mm
Product Width	2.41mm
Supplier Package	E-Line
Typical Fall Time	20ns
Typical Rise Time	8ns
Typical Turn-Off Delay Time	26ns
Typical Turn-On Delay Time	8ns
конфигурация	Single
максимальная рабочая температура	150°C
монтаж (установка)	Through Hole
разрешение	Small Signal
Channel Type	P
Maximum Gate Threshold Voltage	2V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	750 mW
Mounting Type	Through Hole
Package Type	E-Line
Transistor Configuration	Single
Transistor Material	Si
Width	2.41mm
Continuous Drain Current (Id)	200mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	9Ω@200mA, 10V
Drain Source Voltage (Vdss)	240V
Gate Threshold Voltage (Vgs(th)@Id)	2V@1mA
Input Capacitance (Ciss@Vds)	200pF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	750mW
Reverse Transfer Capacitance (Crss@Vds)	-
Total Gate Charge (Qg@Vgs)	-
Type	P Channel
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	4000
Fall Time:	20 ns
Forward Transconductance - Min:	125 mS
Id - Continuous Drain Current:	200 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	750 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Rds On - Drain-Source Resistance:	9 Ohms
Rise Time:	8 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	240 V
Vgs - Gate-Source Voltage:	-40 V, +40 V
Vgs th - Gate-Source Threshold Voltage:	700 mV
Вес, г	0.159