STW11NK90Z
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 900В, 5,8А, Idm: 36,8А, 200Вт, TO247 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 600 |
| Fall Time | 50 ns |
| Height | 20.15 mm |
| Id - Continuous Drain Current | 9.2 A |
| Length | 15.75 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 200 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 95 nC |
| Rds On - Drain-Source Resistance | 980 mOhms |
| Rise Time | 19 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 76 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 5.15 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 9.2 |
| Maximum Drain Source Resistance (mOhm) | 980@10V |
| Maximum Drain Source Voltage (V) | 900 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 50 |
| Typical Gate Charge @ 10V (nC) | 95 |
| Typical Gate Charge @ Vgs (nC) | 95@10V |
| Typical Input Capacitance @ Vds (pF) | 3000@25V |
| Typical Rise Time (ns) | 19 |
| Typical Turn-Off Delay Time (ns) | 76 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Continuous Drain Current | 9.2 A |
| Maximum Drain Source Resistance | 980 mΩ |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 200 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 95 nC @ 10 V |
| Вес, г | 5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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