STD20NF06T4
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см. техническую документацию
см. техническую документацию
4 шт. со склада г.Москва, срок 9-10 дней
330 руб.
от 2 шт. —
240 руб.
Добавить в корзину 1 шт.
на сумму 330 руб.
Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 60В 24A 60Вт 0,04Ом TO252 Характеристики Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 8 ns |
Forward Transconductance - Min | 15 S |
Height | 2.4 mm |
Id - Continuous Drain Current | 24 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 60 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 32 mOhms |
Rise Time | 30 ns |
RoHS | Details |
Series | STD20NF06 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 10 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 6.2 mm |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 8 ns |
Forward Transconductance - Min: | 15 S |
Id - Continuous Drain Current: | 24 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 60 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 31 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 32 mOhms |
Rise Time: | 30 ns |
Series: | STD20NF06 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 30 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Type | N |
Maximum Continuous Drain Current | 24 A |
Maximum Drain Source Resistance | 40 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Power Dissipation | 60 W |
Minimum Gate Threshold Voltage | 2V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 23 nC @ 10 V |
Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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