STD2NK100Z
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см. техническую документацию
см. техническую документацию
36 шт. со склада г.Москва, срок 9-10 дней
270 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
210 руб.
от 10 шт. —
178 руб.
Добавить в корзину 2 шт.
на сумму 540 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, N CH, 1000V, 1.85A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V;
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 2 A |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 70 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 16 nC |
| Rds On - Drain-Source Resistance | 8.5 Ohms |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 1000 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 6.2 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 1.85 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.85 |
| Maximum Drain Source Resistance (mOhm) | 8500@10V |
| Maximum Drain Source Voltage (V) | 1000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 1k |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 70000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 32.5 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Typical Gate Threshold Voltage (V) | 10 |
| Typical Input Capacitance @ Vds (pF) | 499@25V |
| Typical Rise Time (ns) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 41.5 |
| Typical Turn-On Delay Time (ns) | 7.2 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 32.5 ns |
| Forward Transconductance - Min: | 2.4 S |
| Id - Continuous Drain Current: | 1.85 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 70 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Rds On - Drain-Source Resistance: | 8.5 Ohms |
| Rise Time: | 6.5 ns |
| Series: | STD2NK100Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 41.5 ns |
| Typical Turn-On Delay Time: | 7.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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