RK7002BMT116

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1618 шт. со склада г.Москва, срок 9-10 дней

93 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 40 руб.

от 10 шт. — 22 руб.

от 100 шт. — 6.56 руб.

Добавить в корзину 2 шт. на сумму 186 руб.

Альтернативные предложения4

Номенклатурный номер: 8002018980

Бренд: Rohm

Электроэлемент

Описание Транзистор: N-MOSFET; полевой; 60В; 250мА; Idm: 1А; 200/350мВт Характеристики

Brand	ROHM Semiconductor
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	3000
Fall Time	28 ns
Id - Continuous Drain Current	250 mA
Manufacturer	ROHM Semiconductor
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Reel
Pd - Power Dissipation	200 mW
Product Category	MOSFET
Rds On - Drain-Source Resistance	1.7 Ohms
Rise Time	5 ns
RoHS	Details
Series	RK7002BM
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	3.5 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Continuous Drain Current (Id) @ 25В°C	250mA
Power Dissipation-Max (Ta=25В°C)	200mW
Continuous Drain Current (Id)	300mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	2Ω@10V, 0.3A
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	1.9V
Power Dissipation (Pd)	350mW
Type	null
Case	SOT23
Drain current	0.25A
Drain-source voltage	60V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Mounting	SMD
On-state resistance	2.4Ω
Polarisation	unipolar
Power dissipation	200/350mW
Pulsed drain current	1A
Type of transistor	N-MOSFET
Channel Type	N
Maximum Continuous Drain Current	250 mA
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Material	Si
Вес, г	0.05