STD16N65M5
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см. техническую документацию
см. техническую документацию
13 шт. со склада г.Москва, срок 9-10 дней
930 руб.
от 2 шт. —
810 руб.
от 5 шт. —
738 руб.
от 10 шт. —
693.75 руб.
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Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 710В, 12А, 90Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 7 ns |
| Id - Continuous Drain Current | 12 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 270 mOhms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | MDmesh M5 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Power MOSFETs |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| кол-во в упаковке | 2500 |
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 279 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 90 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 7 ns |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 90 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 31 nC |
| Rds On - Drain-Source Resistance: | 270 mOhms |
| Rise Time: | 9 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFETs |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Case | DPAK |
| Drain current | 12A |
| Drain-source voltage | 710V |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 0.279Ω |
| Polarisation | unipolar |
| Power dissipation | 90W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.4271 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1368 КБ
Datasheet
pdf, 826 КБ
Datasheet STD16N65M5
pdf, 844 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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