IKP20N60H3

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Номенклатурный номер: 8002023893

Электроэлемент

IGBT Transistors 600V HI SPEED SW IGBT

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.95 V
Configuration	Single
Continuous Collector Current at 25 C	40 A
Continuous Collector Current Ic Max	40 A
Factory Pack Quantity	500
Gate-Emitter Leakage Current	100 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-220-3 FP
Packaging	Tube
Part # Aliases	IKP20N60H3XK IKP20N60H3XKSA1 SP000852236
Pd - Power Dissipation	170 W
Product Category	IGBT Transistors
RoHS	Details
Series	IKP20N60
Technology	Si
Unit Weight	0.08113 oz
Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.95 V
Configuration:	Single
Continuous Collector Current at 25 C:	40 A
Factory Pack Quantity:	500
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Packaging:	Tube
Part # Aliases:	IKP2N6H3XK SP000852236 IKP20N60H3XKSA1
Pd - Power Dissipation:	170 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Вес, г	2.3

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