SSM3J332R.LF
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см. техническую документацию
см. техническую документацию
1018 шт. со склада г.Москва, срок 9-10 дней
97 руб.
Мин. кол-во для заказа 2 шт.
Добавить в корзину 2 шт.
на сумму 194 руб.
Альтернативные предложения4
Описание
Электроэлемент
Trans Mosfet P-ch Si 30V 6A 3-PIN SOT-23F T/r / Mosfet P Ch 30V 6A 2-3Z1A
Технические параметры
| Brand | Toshiba |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | -6 A |
| Manufacturer | Toshiba |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 144 mOhms |
| RoHS | Details |
| Series | SSM3J332 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 12 V |
| Base Product Number | TD62083 -> |
| Current - Continuous Drain (Id) @ 25В°C | 6A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | SOT-23F |
| Vgs (Max) | В±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Continuous Drain Current (Id) @ 25В°C | 6A |
| Power Dissipation-Max (Ta=25В°C) | 1W |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Material | Si |
| Maximum Continuous Drain Current (A) | 6 |
| Maximum Drain Source Resistance (mOhm) | 42 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | SOT |
| Supplier Package | SOT-23F |
| Typical Gate Charge @ Vgs (nC) | 8.2 4.5V |
| Typical Input Capacitance @ Vds (pF) | 860 15V |
| кол-во в упаковке | 3000 |
| Вес, г | 0.037 |
Техническая документация
Datasheet SSM3J332R,LF
pdf, 345 КБ
Datasheet SSM3J332R,LF
pdf, 343 КБ
Datasheet SSM3J332R,LF
pdf, 412 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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