FS150R12KE3BOSA1, Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray

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71 220 руб.

от 5 шт. — 65 600 руб.

от 10 шт. — 64 980 руб.

Добавить в корзину 1 шт. на сумму 71 220 руб.

Номенклатурный номер: 8002234321

Артикул: FS150R12KE3BOSA1

Diodes, Transistors and Thyristors\IGBT Transistors\IGBT Module

Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray

Automotive	No
Channel Type	N
Configuration	Hex
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Collector-Emitter Voltage (V)	1200
Maximum Continuous Collector Current (A)	200
Maximum Gate Emitter Leakage Current (uA)	0.4
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	125
Maximum Power Dissipation (mW)	700
Minimum Operating Temperature (°C)	-40
Mounting	Screw
Packaging	Tray
Part Status	Active
PCB changed	35
Pin Count	35
PPAP	No
Supplier Package	ECONO3-4
Typical Collector Emitter Saturation Voltage (V)	1.7
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	200 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+125 °C
Maximum Power Dissipation	700 W
Minimum Operating Temperature	-40 °C
Mounting Type	Panel Mount
Package Type	AG-ECONO3-4
Transistor Configuration	3 Phase
Вес, г	300