Главная › Электронные компоненты › Транзисторы › Биполярные (BJTs) › Microchip › TP0606N3-G, Транзистор P-МОП, -60В, -1,5А, TO92

TP0606N3-G, Транзистор P-МОП, -60В, -1,5А, TO92

Изображения служат только для ознакомления,
см. техническую документацию

330 руб.

от 5 шт. — 250 руб.

от 25 шт. — 187 руб.

от 100 шт. — 155.27 руб.

Добавить в корзину 1 шт. на сумму 330 руб.

Номенклатурный номер: 8002545651

Артикул: TP0606N3-G

Бренд: Microchip Technology

Описание

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process.

Технические параметры

Mounting Type	Through Hole
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	15 ns
Forward Transconductance - Min:	300 mS
Id - Continuous Drain Current:	320 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	3.5 Ohms
Rise Time:	15 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Formed
Material	Si
Maximum Continuous Drain Current (A)	0.32
Maximum Diode Forward Voltage (V)	1.8
Maximum Drain Source Resistance (mOhm)	3500@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.4
Maximum IDSS (uA)	10
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	1000
Maximum Pulsed Drain Current @ TC=25°C (A)	3.5
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Bag
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	VDMOS
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-92
Typical Fall Time (ns)	15(Max)
Typical Gate Plateau Voltage (V)	1.7
Typical Input Capacitance @ Vds (pF)	80@25V
Typical Output Capacitance (pF)	50
Typical Reverse Recovery Time (ns)	300
Typical Reverse Transfer Capacitance @ Vds (pF)	15@25V
Typical Rise Time (ns)	15(Max)
Typical Turn-Off Delay Time (ns)	20(Max)
Typical Turn-On Delay Time (ns)	10(Max)
Вес, г	0.22