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VP0106N3-G, Транзистор P-МОП, -60В, -500мА, 1Вт, TO92

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440 руб.

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от 25 шт. — 237 руб.

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Номенклатурный номер: 8002556062

Артикул: VP0106N3-G

Бренд: Microchip Technology

Описание

P-канал 60 В 250 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92-3

Технические параметры

Base Product Number	VP0106 ->
Current - Continuous Drain (Id) @ 25В°C	250mA (Tj)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
ECCN	EAR99
FET Type	P-Channel
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
PCN Packaging	http://www.microchip.com/mymicrochip/NotificationD
Power Dissipation (Max)	1W (Tc)
Rds On (Max) @ Id, Vgs	8Ohm @ 500mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	250 mA
Maximum Drain Source Resistance	8 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Threshold Voltage	3.5V
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Series	VP0106
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	4 ns
Forward Transconductance - Min:	150 mS
Id - Continuous Drain Current:	250 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	8 Ohms
Rise Time:	5 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	4 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Formed
Material	Si
Maximum Continuous Drain Current (A)	0.25
Maximum Drain Source Resistance (mOhm)	8000@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3.5
Maximum IDSS (uA)	10
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Bag
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	DMOS
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-92
Typical Fall Time (ns)	4
Typical Input Capacitance @ Vds (pF)	45@25V
Typical Output Capacitance (pF)	22
Typical Rise Time (ns)	3
Typical Turn-Off Delay Time (ns)	8
Typical Turn-On Delay Time (ns)	4
Вес, г	0.21