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DN3135K1-G, Транзистор N-MOSFET, полевой, 350В, 0,18А, 360мВт, SOT23-3

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320 руб.

от 5 шт. — 260 руб.

от 25 шт. — 207 руб.

от 100 шт. — 172.11 руб.

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Номенклатурный номер: 8002561774

Артикул: DN3135K1-G

Бренд: Microchip Technology

Описание

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Технические параметры

Channel Mode	Depletion
Channel Type	N
Forward Diode Voltage	1.8V
Maximum Continuous Drain Current	72 mA
Maximum Drain Source Resistance	35 Ω
Maximum Drain Source Voltage	350 V
Maximum Gate Source Voltage	-3.5 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	360 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Series	DN3135
Transistor Configuration	Single
Width	1.4mm
Brand:	Microchip Technology
Channel Mode:	Depletion
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	20 ns
Forward Transconductance - Min:	140 mS
Id - Continuous Drain Current:	72 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Pd - Power Dissipation:	360 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	35 Ohms
Rise Time:	15 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	350 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Вес, г	0.006