DN2535N3-G, Транзистор МОП n-канальный, 350В, 150мА, 1Вт, TO92

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330 руб.

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Номенклатурный номер: 8002600689

Артикул: DN2535N3-G

N-канал 350 В 120 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92 (TO-226)

Base Product Number	DN2535 ->
Current - Continuous Drain (Id) @ 25В°C	120mA (Tj)
Drain to Source Voltage (Vdss)	350V
Drive Voltage (Max Rds On, Min Rds On)	0V
ECCN	EAR99
FET Feature	Depletion Mode
FET Type	N-Channel
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
PCN Assembly/Origin	http://www.microchip.com/mymicrochip/NotificationD
PCN Packaging	http://www.microchip.com/mymicrochip/NotificationD
Power Dissipation (Max)	1W (Tc)
Rds On (Max) @ Id, Vgs	25Ohm @ 120mA, 0V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92 (TO-226)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Channel Mode	Depletion
Channel Type	N
Maximum Continuous Drain Current	120 mA
Maximum Drain Source Resistance	25 Ω
Maximum Drain Source Voltage	350 V
Number of Elements per Chip	1
Package Type	TO-92
Pin Count	3
Series	DN2535
Transistor Material	Silicon
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1 W
Minimum Operating Temperature	-55 °C
Transistor Configuration	Single
Width	4.19mm
Вес, г	0.22