FDN5630, Транзистор N-MOSFET, полевой, 60В, 1,7А, 500мВт, SuperSOT-3

Изображения служат только для ознакомления,
см. техническую документацию

89 руб.

Кратность заказа 5 шт.

от 25 шт. — 60 руб.

от 100 шт. — 47 руб.

от 500 шт. — 39.39 руб.

Добавить в корзину 5 шт. на сумму 445 руб.

Номенклатурный номер: 8002611177

Артикул: FDN5630

Semiconductors\Transistors\Unipolar transistors\N channel transistors

Описание Транзистор N-MOSFET, полевой, 60В, 1,7А, 500мВт, SuperSOT-3

Case	SuperSOT-3
Drain current	1.7A
Drain-source voltage	60V
Features of semiconductor devices	logic level
Gate charge	10nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
Mounting	SMD
On-state resistance	0.18Ω
Polarisation	unipolar
Power dissipation	0.5W
Technology	PowerTrench®
Type of transistor	N-MOSFET
Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	6 ns
Forward Transconductance - Min	6 S
Height	1.12 mm
Id - Continuous Drain Current	1.7 A
Length	2.9 mm
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SSOT-3
Packaging	Reel
Part # Aliases	FDN5630_NL
Pd - Power Dissipation	500 mW(1/2 W)
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	73 mOhms
Rise Time	6 ns
RoHS	Details
Series	FDN5630
Tradename	PowerTrench
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns
Unit Weight	0.001058 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Width	1.4 mm
Вес, г	0.03

pdf, 226 КБ

pdf, 244 КБ

Мы рекомендуем