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LND150K1-G, Транзистор N-MOSFET, полевой, 500В, 0,013А, 360мВт, SOT23-3

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см. техническую документацию

360 руб.

от 5 шт. — 190 руб.

от 25 шт. — 155 руб.

от 100 шт. — 123.24 руб.

Добавить в корзину 1 шт. на сумму 360 руб.

Номенклатурный номер: 8002651001

Артикул: LND150K1-G

Бренд: Microchip Technology

Описание

Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R

Технические параметры

Brand:	Microchip Technology
Channel Mode:	Depletion
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	1.3 us
Forward Transconductance - Min:	1 mOhms
Id - Continuous Drain Current:	13 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Pd - Power Dissipation:	360 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	1 kOhms
Rise Time:	0.45 us
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	0.1 us
Typical Turn-On Delay Time:	0.09 us
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Automotive	No
Channel Mode	Depletion
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	0.013
Maximum Diode Forward Voltage (V)	0.9
Maximum Drain Source Resistance (mOhm)	1000000@0V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum IDSS (uA)	3
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	360
Maximum Pulsed Drain Current @ TC=25°C (A)	0.03
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	DMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Fall Time (ns)	1300
Typical Gate Plateau Voltage (V)	0.5
Typical Input Capacitance @ Vds (pF)	7.5@25V
Typical Output Capacitance (pF)	2
Typical Reverse Recovery Time (ns)	200
Typical Reverse Transfer Capacitance @ Vds (pF)	0.5@25V
Typical Rise Time (ns)	450
Typical Turn-Off Delay Time (ns)	100
Typical Turn-On Delay Time (ns)	90
Continuous Drain Current (Id)	13mA
Drain Source On Resistance (RDS(on)@Vgs,Id)	1kΩ@0V, 500uA
Drain Source Voltage (Vdss)	500V
Gate Threshold Voltage (Vgs(th)@Id)	-
Input Capacitance (Ciss@Vds)	10pF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	360mW
Type	N Channel
Вес, г	0.006