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STB13007DT4

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3 шт. со склада г.Москва, срок 6-7 дней

500 руб.

от 2 шт. — 400 руб.

Добавить в корзину 1 шт. на сумму 500 руб.

Альтернативные предложения2

Номенклатурный номер: 8002700615

Бренд: STMicroelectronics

Описание

Электроэлемент

TRANSISTOR, BJT, NPN, 400V, 8A, TO-263-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:18hFE; Transis

Технические параметры

Brand	STMicroelectronics
Collector- Base Voltage VCBO	700 V
Collector- Emitter Voltage VCEO Max	400 V
Configuration	Single
Continuous Collector Current	8 A
DC Collector/Base Gain hfe Min	8
Emitter- Base Voltage VEBO	9 V
Factory Pack Quantity	1000
Height	4.6 mm(Max)
Length	10.4 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	16 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	SMD/SMT
Package / Case	D2PAK-3
Packaging	MouseReel
Pd - Power Dissipation	80 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	NPN
Unit Weight	0.070548 oz
Width	9.35 mm(Max)
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	400 V
Collector-Emitter Saturation Voltage:	2 V
Configuration:	Single
Continuous Collector Current:	8 A
DC Collector/Base Gain hFE Min:	8
Emitter- Base Voltage VEBO:	9 V
Factory Pack Quantity:	1000
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	8 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Pd - Power Dissipation:	80 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	1.96