STB55NF06LT4, Транзистор полевой N-канальный 60В 55А 95Вт
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159 шт. со склада г.Москва, срок 2 недели
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 60В 55А 95Вт
Технические параметры
| Корпус | D2Pak(TO-263) | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Maximum Power Dissipation | 95 W | |
| Minimum Gate Threshold Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | D2PAK(TO-263) | |
| Pin Count | 3 | |
| Series | STripFET II | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 27 nC @ 4.5 V | |
| Width | 10.4mm | |
| Brand: | STMicroelectronics | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Fall Time: | 20 ns | |
| Forward Transconductance - Min: | 30 S | |
| Id - Continuous Drain Current: | 55 A | |
| Manufacturer: | STMicroelectronics | |
| Maximum Operating Temperature: | +175 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | D2PAK-3(TO-263-3) | |
| Pd - Power Dissipation: | 95 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 37 nC | |
| Qualification: | AEC-Q101 | |
| Rds On - Drain-Source Resistance: | 14 mOhms | |
| Rise Time: | 100 ns | |
| Series: | STB55NF06L | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 40 ns | |
| Typical Turn-On Delay Time: | 20 ns | |
| Vds - Drain-Source Breakdown Voltage: | 60 V | |
| Vgs - Gate-Source Voltage: | -16 V, +16 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | |
| Brand | STMicroelectronics | |
| Configuration | Single | |
| Factory Pack Quantity | 1000 | |
| Fall Time | 20 ns | |
| Forward Transconductance - Min | 30 S | |
| Height | 4.6 mm | |
| Id - Continuous Drain Current | 55 A | |
| Length | 10.4 mm | |
| Manufacturer | STMicroelectronics | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-263-3 | |
| Packaging | Cut Tape | |
| Pd - Power Dissipation | 95 W | |
| Product Category | MOSFET | |
| Rds On - Drain-Source Resistance | 14 mOhms | |
| Rise Time | 100 ns | |
| RoHS | Details | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 40 ns | |
| Typical Turn-On Delay Time | 20 ns | |
| Unit Weight | 0.139332 oz | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Vgs - Gate-Source Voltage | 16 V | |
| Вес, г | 1.2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 336 КБ
Datasheet STP55NF06L
pdf, 319 КБ
Datasheet STP55NF06L
pdf, 332 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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