IRFU420PBF, Транзистор N-MOSFET, полевой, 500В, 1,5А, 42Вт, IPAK

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320 руб.

от 5 шт. — 150 руб.

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Добавить в корзину 1 шт. на сумму 320 руб.

Номенклатурный номер: 8002738025

Артикул: IRFU420PBF

Описание Транзистор N-MOSFET, полевой, 500В, 1,5А, 42Вт, IPAK

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	2.4 A
Maximum Drain Source Resistance	3 Ω
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	IPAK(TO-251)
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	19(Maximumn)nC
Width	6.22mm
Brand	Vishay Semiconductors
Configuration	Single
Factory Pack Quantity	3000
Fall Time	16 ns
Height	6.22 mm
Id - Continuous Drain Current	2.4 A
Length	6.73 mm
Manufacturer	Vishay
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-251-3
Packaging	Tube
Pd - Power Dissipation	2.5 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	3 Ohms
Rise Time	8.6 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	33 ns
Typical Turn-On Delay Time	8 ns
Unit Weight	0.01164 oz
Vds - Drain-Source Breakdown Voltage	500 V
Vgs - Gate-Source Voltage	20 V
Вес, г	0.4