HP8K22TB
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
9 шт. со склада г.Москва, срок 9-10 дней
460 руб.
от 2 шт. —
370 руб.
Добавить в корзину 1 шт.
на сумму 460 руб.
Альтернативные предложения1
Описание
Электроэлемент
Trans MOSFET N-CH 30V 12A/20A 8-Pin HSOP EP T/R
Технические параметры
| Brand | ROHM Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 3.4 ns, 8.4 ns |
| Forward Transconductance - Min | 10 S, 18 S |
| Id - Continuous Drain Current | 27 A, 57 A |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | HSOP-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 3 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 10 nC, 16.8 nC |
| Rds On - Drain-Source Resistance | 6.7 mOhms, 3.6 mOhms |
| Rise Time | 4.5 ns, 7.2 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 25.5 ns, 34.7 ns |
| Typical Turn-On Delay Time | 9.6 ns, 13.2 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V, 1.3 V |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 3.4 ns, 8.4 ns |
| Forward Transconductance - Min: | 10 S, 18 S |
| Id - Continuous Drain Current: | 27 A, 57 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | HSOP-8 |
| Part # Aliases: | HP8K22 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC, 16.8 nC |
| Rds On - Drain-Source Resistance: | 6.7 mOhms, 3.6 mOhms |
| Rise Time: | 4.5 ns, 7.2 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 25.5 ns, 34.7 ns |
| Typical Turn-On Delay Time: | 9.6 ns, 13.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Вес, г | 1 |
Техническая документация
Документация
pdf, 2285 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
