MJD50G
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см. техническую документацию
см. техническую документацию
160 руб.
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Описание
Электроэлемент
TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:10MHz; Power Dissipation Pd:1.56W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-252; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:200mA; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:10MHz; Gain Bandwidth ft Typ:10MHz; Hfe Min:25; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD50; Voltage Vcbo:500V
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 500 V |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product fT | 10 MHz |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 15 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJD50 |
| Transistor Polarity | NPN |
| Width | 6.22 mm |
| Maximum Collector Base Voltage | 500 V dc |
| Maximum Collector Emitter Voltage | 400 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 2 MHz |
| Maximum Power Dissipation | 15 W |
| Minimum DC Current Gain | 30 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
