KDT00030TR

Фото 1/2 KDT00030TR
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см. техническую документацию
260 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт.210 руб.
от 10 шт.179 руб.
от 11 шт.172.62 руб.
Добавить в корзину 2 шт. на сумму 520 руб.
Номенклатурный номер: 8002975424

Описание

Электроэлемент
TRANSISTOR, PHOTO, 630NM, CHIPLED-2; Wavelength Typ:630nm; Viewing Angle:-; Power Consumption:-; No. of Pins:2Pins; Transistor Case Style:ChipLED; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 4 - 72 hour

Технические параметры

Brand ON Semiconductor/Fairchild
Collector- Emitter Voltage VCEO Max 6 V
Collector-Emitter Saturation Voltage 4.6 V
Dark Current 0.1 uA
Factory Pack Quantity 3000
Height 0.6 mm
Length 1.7 mm
Light Current 1100 uA
Manufacturer ON Semiconductor
Maximum Operating Temperature +85 C
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Package / Case SMD
Packaging Reel
Peak Wavelength 630 nm
Product Phototransistors
Product Category Phototransistors
RoHS Details
Series KDT00030
Type Chip
Unit Weight 0.00454 oz
Wavelength 630 nm
Width 0.8 mm
Automotive No
ECCN (US) EAR99
EU RoHS Compliant
Fabrication Technology NPN Transistor
Lens Shape Type Flat
Maximum Collector-Emitter Saturation Voltage (V) 4.6(Typ)
Maximum Collector-Emitter Voltage (V) 60
Maximum Dark Current (nA) 100
Maximum Light Current (uA) 1100(Typ)
Maximum Operating Temperature (°C) 85
Minimum Operating Temperature (°C) -40
Mounting Surface Mount
Number of Channels per Chip 1
Part Status Active
PCB changed 2
Peak Wavelength (nm) 630
Phototransistor Type Phototransistor
Pin Count 2
Polarity NPN
PPAP No
Standard Package Name SMD
Supplier Package SMD
Viewing Orientation Top View
Maximum Dark Current 100nA
Maximum Light Current 1100µA
Maximum Wavelength Detected 630nm
Mounting Type Surface Mount
Number of Channels 1
Number of Pins 2
Spectral Range of Sensitivity Maximum of 630 nm
Вес, г 0.129

Техническая документация

Datasheet
pdf, 1366 КБ
Datasheet
pdf, 145 КБ
Документация
pdf, 1378 КБ