DN2625K4-G
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890 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 250V, 1.1A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:250V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Power
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 1.1A(Tj) |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.04nC @ 1.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
| Manufacturer | Microchip Technology |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1A, 0V |
| Series | - |
| Supplier Device Package | TO-252, (D-Pak) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | - |
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 100 mS |
| Id - Continuous Drain Current: | 1.1 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 3.5 Ohms |
| Rise Time: | 20 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 3500@0V |
| Maximum Drain Source Voltage (V) | 250 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum IDSS (uA) | 1100000(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 20(Max) |
| Typical Gate Charge @ Vgs (nC) | 7.04(Max)@1.5V |
| Typical Input Capacitance @ Vds (pF) | 800@25V |
| Typical Rise Time (ns) | 20(Max) |
| Typical Turn-Off Delay Time (ns) | 10(Max) |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Вес, г | 0.426 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
