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2N6111G

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см. техническую документацию

530 руб.

от 2 шт. — 420 руб.

от 5 шт. — 346 руб.

от 10 шт. — 317.52 руб.

Добавить в корзину 1 шт. на сумму 530 руб.

Номенклатурный номер: 8002981644

Бренд: ON Semiconductor***

Описание

Электроэлемент

TRANSISTOR, PNP, -30V, -7A, TO-220AB; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-7A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Технические параметры

Category	Bipolar Power
Collector Current (DC)	7(A)
Collector Current (DC) (Max)	7 A
Collector-Base Voltage	40(V)
Collector-Emitter Voltage	30(V)
Configuration	Single
DC Current Gain	30
DC Current Gain (Min)	30
Emitter-Base Voltage	5(V)
Frequency	10(MHz)
Frequency (Max)	10 MHz
Mounting	Through Hole
Number of Elements	1
Operating Temp Range	-65C to 150C
Operating Temperature Classification	Military
Output Power	Not Required(W)
Package Type	TO-220AB
Packaging	Rail/Tube
Pin Count	3+Tab
Power Dissipation	40(W)
Rad Hardened	No
Transistor Polarity	PNP
Maximum Collector Base Voltage	40 V dc
Maximum Collector Emitter Voltage	-30 V
Maximum DC Collector Current	-7 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	4 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	40 W
Mounting Type	Through Hole
Number of Elements per Chip	1
Transistor Configuration	Single
Transistor Type	PNP
Вес, г	2.041