MJD253G
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см. техническую документацию
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190 руб.
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Описание
Электроэлемент
TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 0.6 V |
| Configuration | Single |
| Continuous Collector Current | 4 A |
| DC Collector/Base Gain hfe Min | 40 |
| Emitter- Base Voltage VEBO | 7 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product fT | 40 MHz |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 4 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3(DPAK) |
| Packaging | Reel |
| Pd - Power Dissipation | 12.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJD253 |
| Transistor Polarity | PNP |
| Width | 6.22 mm |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Type | PNP |
| Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Base Current (A) | 1 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Base Emitter Saturation Voltage (V) | 1.8@200mA@2A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@50mA@500mA|0.6@100mA@1A |
| Maximum DC Collector Current (A) | 4 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Minimum DC Current Gain | 15@1A@1V|40@200mA@1V |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Supplier Package | DPAK |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Package Width | 6.22(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Collector Emitter Voltage Max | 100В |
| DC Current Gain hFE Min | 15hFE |
| DC Усиление Тока hFE | 15hFE |
| Power Dissipation | 12.5Вт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | TO-252(DPAK) |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Частота Перехода ft | 40МГц |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Collector Emitter Voltage | -100 V |
| Maximum Emitter Base Voltage | 7 V |
| Maximum Operating Frequency | 10 MHz |
| Maximum Power Dissipation | 12.5 W |
| Mounting Type | Surface Mount |
| Package Type | DPAK(TO-252) |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.66 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
