2N4401TFR
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см. техническую документацию
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120 руб.
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57 руб.
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36 руб.
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17.14 руб.
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Описание
Электроэлемент
TRANSISTOR, NPN, 40V, 0.6A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:40hFE; Tra
Технические параметры
Category | Bipolar Small Signal |
Collector Current (DC) | 0.6(A) |
Collector-Base Voltage | 60(V) |
Configuration | Single |
DC Current Gain | 20 |
Emitter-Base Voltage | 6(V) |
Frequency | 250(MHz) |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Output Power | Not Required(W) |
Package Type | TO-92 |
Packaging | Tape and Reel |
Pin Count | 3 |
Power Dissipation | 0.625(W) |
Rad Hardened | No |
Transistor Polarity | NPN |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 600 mA |
Maximum Emitter Base Voltage | 6 V dc |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.5 W |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Transistor Configuration | Single |
Transistor Type | NPN |
Brand: | onsemi/Fairchild |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 750 mV |
Configuration: | Single |
Continuous Collector Current: | 600 mA |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Gain Bandwidth Product fT: | 250 MHz |
Manufacturer: | onsemi |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 Kinked Lead |
Packaging: | Reel, Cut Tape |
Part # Aliases: | 2N4401TFR_NL |
Pd - Power Dissipation: | 625 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | 2N4401 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.406 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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