2SD1624T-TD-E

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см. техническую документацию

200 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 140 руб.

от 10 шт. — 114 руб.

от 44 шт. — 96.38 руб.

Добавить в корзину 2 шт. на сумму 400 руб.

Номенклатурный номер: 8002989139

Электроэлемент

Trans GP BJT NPN 50V 3A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SD1624T-TD-E)

Brand	ON Semiconductor
Collector- Base Voltage VCBO	60 V
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Saturation Voltage	0.35 V
Configuration	Single
DC Current Gain hFE Max	560
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	150 MHz
Manufacturer	ON Semiconductor
Maximum DC Collector Current	3 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	PCP-3
Packaging	Reel
Pd - Power Dissipation	1.5 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SD1624
Transistor Polarity	NPN
Brand:	onsemi
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	190 mV
Configuration:	Single
DC Current Gain hFE Max:	560
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	3 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	PCP-3
Pd - Power Dissipation:	500 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.106

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