HGTD1N120BNS9A
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3; DC Collector Current:5.3A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-252AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Base Part Number | HGTD1N120 |
| Current - Collector (Ic) (Max) | 5.3A |
| Current - Collector Pulsed (Icm) | 6A |
| Gate Charge | 14nC |
| IGBT Type | NPT |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 60W |
| Series | - |
| Supplier Device Package | TO-252AA |
| Switching Energy | 70ВµJ(on), 90ВµJ(off) |
| Td (on/off) @ 25В°C | 15ns/67ns |
| Test Condition | 960V, 1A, 82Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 5.3 A |
| Continuous Collector Current Ic Max: | 5.3 A |
| Continuous Collector Current: | 5.3 A |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gate-Emitter Leakage Current: | +/-250 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 60 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | HGTD1N120BNS |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 0.26 |
Техническая документация
Datasheet
pdf, 216 КБ
Документация
pdf, 217 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
