BD912, Trans GP BJT PNP 100V 15A 90000mW 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
5092 шт., срок 7-9 недель
120 руб.
Мин. кол-во для заказа 320 шт.
от 441 шт. —
111 руб.
Добавить в корзину 320 шт.
на сумму 38 400 руб.
Альтернативные предложения3
Описание
Semiconductor - Discrete > Transistors > BJT - General Purpose
Описание Транзистор p-n-p 100В 15A 90Вт TO220 Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | PNP |
Технические параметры
Base Product Number | BD912 -> |
Current - Collector (Ic) (Max) | 15A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 4V |
ECCN | EAR99 |
Frequency - Transition | 3MHz |
HTSUS | 8541.29.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tube |
Package / Case | TO-220-3 |
Power - Max | 90W |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-220AB |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2.5A, 10A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Brand | STMicroelectronics |
Collector- Base Voltage VCBO | 100 V |
Collector- Emitter Voltage VCEO Max | 100 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 15 |
DC Current Gain hFE Max | 150 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 1000 |
Gain Bandwidth Product fT | 3 MHz |
Height | 9.15 mm(Max) |
Length | 10.4 mm(Max) |
Manufacturer | STMicroelectronics |
Maximum DC Collector Current | 15 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | Through Hole |
Packaging | Tube |
Pd - Power Dissipation | 90 W |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | 500V Transistors |
Transistor Polarity | PNP |
Width | 4.6 mm(Max) |
Brand: | STMicroelectronics |
Collector- Base Voltage VCBO: | 100 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Collector-Emitter Saturation Voltage: | 3 V |
Configuration: | Single |
DC Collector/Base Gain hFE Min: | 15 |
DC Current Gain hFE Max: | 150 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Gain Bandwidth Product fT: | 3 MHz |
Manufacturer: | STMicroelectronics |
Maximum DC Collector Current: | 15 A |
Maximum Operating Temperature: | +150 C |
Mounting Style: | Through Hole |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 90 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BD912 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
Похожие товары