FDV305N, Trans MOSFET N-CH 20V 0.9A 3-Pin SOT-23 T/R
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 7 ns |
Forward Transconductance - Min | 3 S |
Height | 1.2 mm |
Id - Continuous Drain Current | 900 mA |
Length | 2.9 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | FDV305N_NL |
Pd - Power Dissipation | 350 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 164 mOhms |
Rise Time | 7 ns |
RoHS | Details |
Series | FDV305N |
Technology | Si |
Tradename | PowerTrench |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 8 ns |
Typical Turn-On Delay Time | 4.5 ns |
Unit Weight | 0.001058 oz |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 12 V |
Width | 1.3 mm |
Automotive | No |
Channel Type | N |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.9 |
Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Drain Source Resistance (mOhm) | 220@4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±12 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 12 |
Maximum Power Dissipation (mW) | 350 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 2 |
Minimum Gate Threshold Voltage (V) | 0.6 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | PowerTrench |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Typical Diode Forward Voltage (V) | 0.75 |
Typical Fall Time (ns) | 1.4 |
Typical Gate Charge @ 10V (nC) | 1.1 |
Typical Gate Charge @ Vgs (nC) | 1.1@4.5V |
Typical Gate Plateau Voltage (V) | 1.9 |
Typical Gate Threshold Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 0.26 |
Typical Gate to Source Charge (nC) | 0.26 |
Typical Input Capacitance @ Vds (pF) | 109@10V |
Typical Output Capacitance (pF) | 30 |
Typical Reverse Recovery Charge (nC) | 2.2 |
Typical Reverse Recovery Time (ns) | 7.4 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 14@10V |
Typical Rise Time (ns) | 7 |
Typical Turn-Off Delay Time (ns) | 8 |
Typical Turn-On Delay Time (ns) | 4.5 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 3 S |
Id - Continuous Drain Current: | 900 mA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Part # Aliases: | FDV305N_NL |
Pd - Power Dissipation: | 350 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 1.5 nC |
Rds On - Drain-Source Resistance: | 164 mOhms |
Rise Time: | 7 ns |
Series: | FDV305N |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 8 ns |
Typical Turn-On Delay Time: | 4.5 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Maximum Continuous Drain Current | 900 mA |
Maximum Drain Source Resistance | 220 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -12 V, +12 V |
Maximum Power Dissipation | 350 mW |
Minimum Gate Threshold Voltage | 0.6V |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V |
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