MBD54DWT1G, Rectifier Diode Schottky 0.2A 5ns 6-Pin SC-88 T/R
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см. техническую документацию
см. техническую документацию
17 руб.
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Описание
Semiconductor - Discrete > Diodes > Rectifier
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.
Технические параметры
Automotive | No |
Configuration | Dual Anti Parallel |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Maximum Continuous Forward Current (A) | 0.2 |
Maximum DC Reverse Voltage (V) | 30 |
Maximum Diode Capacitance (pF) | 10 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 150 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 6 |
Peak Forward Voltage (V) | 1 0.1A |
Peak Non-Repetitive Surge Current (A) | 0.6 |
Peak Reverse Current (uA) | 2 25V |
Peak Reverse Recovery Time (ns) | 5 |
Pin Count | 6 |
PPAP | No |
Standard Package Name | SC |
Supplier Package | SC-88 |
Type | Schottky Diode |
Diode Configuration | Isolated |
Diode Technology | Schottky Barrier |
Diode Type | Schottky |
Maximum Continuous Forward Current | 200mA |
Maximum Forward Voltage Drop | 1V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOT-363(SC-88) |
Peak Reverse Recovery Time | 5ns |
Peak Reverse Repetitive Voltage | 30V |
Rectifier Type | Schottky Diode |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 190 КБ
Datasheet MBD54DWT1G
pdf, 130 КБ
Основные размеры SMD-компонентов
pdf, 186 КБ