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SQA442EJ-T1_GE3

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см. техническую документацию

220 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 160 руб.

от 10 шт. — 135 руб.

от 80 шт. — 116.50 руб.

Добавить в корзину 2 шт. на сумму 440 руб.

Номенклатурный номер: 8003711314

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Электроэлемент

AEC-Q N-CHANNEL 60 V (D-S) 175C MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:13.6W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:175В°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	9A(Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	636pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® SC-70-6
Packaging	Digi-ReelВ®
Part Status	Active
Power Dissipation (Max)	13.6W(Tc)
Rds On (Max) @ Id, Vgs	32 mOhm @ 3A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Standard Package	1
Supplier Device Package	PowerPAKВ® SC-70-6 Single
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	1.4 ns
Forward Transconductance - Min:	21 S
Id - Continuous Drain Current:	9 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SC-70-6
Pd - Power Dissipation:	13.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	9.7 nC
Rds On - Drain-Source Resistance:	32 mOhms
Rise Time:	2 ns
Series:	SQ
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	7.3 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V