SQJ960EP-T1_GE3

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730 руб.

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Номенклатурный номер: 8004275452

Электроэлемент

Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L

Current - Continuous Drain (Id) @ 25В°C	8A
Drain to Source Voltage (Vdss)	60V
FET Feature	Logic Level Gate
FET Type	2 N-Channel(Dual)
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	PowerPAKВ® SO-8 Dual
Packaging	Cut Tape(CT)
Part Status	Active
Power - Max	34W
Rds On (Max) @ Id, Vgs	36mOhm @ 5.3A, 10V
Series	Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package	PowerPAKВ® SO-8 Dual
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	3000
Fall Time:	7 ns, 7 ns
Forward Transconductance - Min:	16 S, 16 S
Id - Continuous Drain Current:	8 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	PowerPAK-SO-8-4
Pd - Power Dissipation:	34 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	30 mOhms, 30 mOhms
Rise Time:	8 ns, 8 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	19 ns, 19 ns
Typical Turn-On Delay Time:	6 ns, 6 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.5066