BD239C

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4 шт. со склада г.Москва, срок 6-7 дней

270 руб.

от 2 шт. — 170 руб.

Добавить в корзину 1 шт. на сумму 270 руб.

Альтернативные предложения2

Номенклатурный номер: 8004508957

Электроэлемент

Описание Транзистор: NPN, биполярный, 115В, 2А, 30Вт, TO220AB Характеристики

Brand	STMicroelectronics
Collector- Base Voltage VCBO	115 V
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	0.7 V
Configuration	Single
Continuous Collector Current	2 A
DC Collector/Base Gain hfe Min	40
DC Current Gain hFE Max	40
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	1000
Height	9.15 mm(Max)
Length	10.4 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	2 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	30000 mW
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	NPN
Width	4.6 mm(Max)
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	700 mV
Configuration:	Single
Continuous Collector Current:	2 A
DC Collector/Base Gain hFE Min:	40
DC Current Gain hFE Max:	40
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	2 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BD239C
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	3.5