Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STB55NF06LT4, MOSFET N-Ch 60 Volt 55 Amp

STB55NF06LT4, MOSFET N-Ch 60 Volt 55 Amp

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4837 шт., срок 6-8 недель

530 руб.

от 10 шт. — 420 руб.

от 100 шт. — 314 руб.

от 250 шт. — 270.83 руб.

Добавить в корзину 1 шт. на сумму 530 руб.

Альтернативные предложения3

Номенклатурный номер: 8004583733

Артикул: STB55NF06LT4

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 60В 55A 95Вт 0,018Ом DІPak

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	20 ns
Forward Transconductance - Min:	30 S
Id - Continuous Drain Current:	55 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Pd - Power Dissipation:	95 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	37 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	14 mOhms
Rise Time:	100 ns
Series:	STB55NF06L
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	20 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Resistance	20 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	95 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	27 nC @ 4.5 V
Width	10.4mm
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	1000
Fall Time	20 ns
Forward Transconductance - Min	30 S
Height	4.6 mm
Id - Continuous Drain Current	55 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263-3
Packaging	Cut Tape
Pd - Power Dissipation	95 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	14 mOhms
Rise Time	100 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	20 ns
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	16 V
Continuous Drain Current (Id)	55A
Drain Source On Resistance (RDS(on)@Vgs,Id)	18mΩ@27.5A, 10V
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	4.7V@250uA
Input Capacitance (Ciss@Vds)	1.7nF@25V
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	95W
Total Gate Charge (Qg@Vgs)	37nC@4.5V
Вес, г	4