BSC011N03LSATMA1, MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

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360 руб.

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Номенклатурный номер: 8004635312

Артикул: BSC011N03LSATMA1

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	6.2 ns
Forward Transconductance - Min:	85 S
Id - Continuous Drain Current:	230 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TDSON-8
Part # Aliases:	BSC011N03LS SP000799082
Pd - Power Dissipation:	96 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	72 nC
Rds On - Drain-Source Resistance:	1.1 mOhms
Rise Time:	8.8 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	OptiMOS
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	6.7 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1V
Maximum Continuous Drain Current	100 A
Maximum Drain Source Resistance	1.4 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	96 W
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TDSON
Pin Count	8
Series	OptiMOS
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	36 nC @ 4.5 V
Width	5.35mm
Вес, г	0.167