BSC019N04LSATMA1, MOSFET TRENCH = 40V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
OptiMOS™ 5 Power MOSFETsInfineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower R DS(on) and Figure of Merit (R DS(on) x Q g ) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 95 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC019N04LS SP001067012 |
| Pd - Power Dissipation: | 78 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 57 nC |
| Rds On - Drain-Source Resistance: | 1.5 mOhms |
| Rise Time: | 4 ns |
| Series: | OptiMOS 5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0015Ом |
| Power Dissipation | 78Вт |
| Количество Выводов | 8вывод(-ов) |
| Линейка Продукции | OptiMOS |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 40В |
| Непрерывный Ток Стока | 100А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 2В |
| Рассеиваемая Мощность | 78Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0015Ом |
| Стиль Корпуса Транзистора | TDSON |
| Automotive | No |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Maximum Continuous Drain Current - (A) | 27 |
| Maximum Drain Source Resistance - (mOhm) | 1.9@10V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 2 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Supplier Package | TDSON |
| Typical Gate Charge @ 10V - (nC) | 41 |
| Typical Gate Charge @ Vgs - (nC) | 41@10VI21@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 2900@20V |
| Maximum Continuous Drain Current | 155 A |
| Maximum Drain Source Voltage | 40 V |
| Mounting Type | SMD |
| Package Type | PG-TDSON-8 |
| Вес, г | 33 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
