FS50R12W2T7BPSA1, IGBT Modules EASY STANDARD
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
1200V Sixpack IGBT ModulesInfineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 1.5 V |
Continuous Collector Current at 25 C: | 50 A |
Factory Pack Quantity: Factory Pack Quantity: | 15 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Packaging: | Tray |
Part # Aliases: | FS50R12W2T7 SP005426181 |
Pd - Power Dissipation: | 20 mW |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Series: | Trenchstop IGBT7 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP ~ EasyPACK |
Техническая документация
Datasheet
pdf, 933 КБ
Дополнительная информация
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