2SB1427T100E, Bipolar Transistors - BJT PNP 20V 2A
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
966 шт., срок 6-8 недель
190 руб.
от 10 шт. —
160 руб.
от 100 шт. —
107 руб.
от 500 шт. —
88.46 руб.
Добавить в корзину 1 шт.
на сумму 190 руб.
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
2Sx Bipolar Junction TransistorsROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 20 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | -2 A |
| DC Collector/Base Gain hfe Min: | 390 |
| DC Current Gain hFE Max: | 820 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 150 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | MPT-3 |
| Part # Aliases: | 2SB1427 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2SB1427 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | -20 V |
| Maximum Collector Emitter Voltage | -20 V |
| Maximum DC Collector Current | -2 A |
| Maximum Emitter Base Voltage | -6 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SC-62 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 1.95 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
Похожие товары
![КТ805АМ, Биполярный транзистор, NPN, 60В, 5А, 30Вт, h21e= 15 [КТ-28 / TO-220]](https://static.chipdip.ru/lib/413/DOC005413065.jpg)
