2N5415, Bipolar Transistors - BJT Power BJT

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Номенклатурный номер: 8004670864

Артикул: 2N5415

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярные транзисторы - BJT Power BJT

Brand:	Microchip Technology
Collector- Base Voltage VCBO:	200 V
Collector- Emitter Voltage VCEO Max:	200 V
Collector-Emitter Saturation Voltage:	2.5 V
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hFE Min:	15
DC Current Gain hFE Max:	120
Emitter- Base Voltage VEBO:	4 V
Factory Pack Quantity: Factory Pack Quantity:	1
Manufacturer:	Microchip
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package/Case:	TO-5-3
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	0.4