APT34F60B, MOSFET FREDFET MOS8 600 V 34 A TO-247

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Номенклатурный номер: 8004670894

Артикул: APT34F60B

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

N-канал 600V 36A (Tc) 624W (Tc) сквозное отверстие TO-247 [B]

Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Fall Time:	34 ns
Forward Transconductance - Min:	32 S
Id - Continuous Drain Current:	36 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	624 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	165 nC
Rds On - Drain-Source Resistance:	190 mOhms
Rise Time:	43 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	115 ns
Typical Turn-On Delay Time:	43 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Base Product Number	APT34F60 ->
Current - Continuous Drain (Id) @ 25В°C	36A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	624W (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 17A, 10V
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 1mA
Вес, г	8